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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V DS = –48 V, V GS = 0 V
V DS = –48 V, V GS = 0V, T J = 55 ° C
V GS = 20 V, V DS = 0 V
V GS = –20 V, V DS = 0 V
–60
–45
–1
–10
100
–100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –3.0 A
–1
–1.6
4
78
–3
150
V
mV/ ° C
m ?
On–Resistance
V GS = –4.5 V, I D = –1.6 A
V GS = –10 V, I D = –3.0 A, T J =125 ° C
99
122
240
250
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = –10 V,
V DS = –15 V,
V DS = –5 V
I D = –3.0 A
–12
8
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
732
86
38
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
t rr
Q rr
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
I F = –3.0 A,
d iF /d t = 100 A/μs
V DS = –30 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –3.0 A,
8
11
10
10
24
66
16
2.2
16
20
20
20
22
ns
ns
ns
ns
nS
nC
nC
nC
Q gd
Gate–Drain Charge
3.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –2.1 A
(Note 2)
–0.8
–1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in 2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
NDS9407 Rev B 1 (W)
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